NDLI: A semi-empirical model for electroabsorption in GaAs/AlGaAs multiple quantum well modulator structures

Content Provider	IEEE Xplore Digital Library
Author	lengyel, G. Jelley, K.W. Engelmann, R.W.H.
Copyright Year	1965
Abstract	A semiempirical model for electroabsorption in GaAs/AlGaAs quantum wells that is simple and has sufficient accuracy to make it suitable as a fast design tool for multiple quantum well (MQW) optical modulators is proposed. The model is based on a higher-order perturbation approach which includes all bound solutions of the unperturbed Hamiltonian. To complete the model, semiempirical relationships are set up for both the zero-field absorption peak and the half-width at half-maximum (HWHM) values of the heavy-hole exciton. Comparison with extensive experimental data shows a remarkable agreement for a range of wells between 5 and 20 nm and for photon energies on the long wavelength side of the absorption peak. These wavelength and well-size ranges coincide with those needed for practical design.<>
Sponsorship	IEEE Lasers and Electro-Optics Society
Starting Page	296
Ending Page	304
Page Count	9
File Size	684438
File Format	PDF
ISSN	00189197
Volume Number	26
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-02-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Optical modulation Absorption Optical design Quantum well devices Excitons
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

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