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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ohtake, M. Itabashi, A. Kirino, F. Futamoto, M. |
| Copyright Year | 1965 |
| Abstract | FePd, FePt, and CoPt alloy thin films are prepared on MgO(110) single-crystal substrates by using two different methods. One is one-step method consisting of deposition at an elevated substrate temperature of 600°C and the other is two-step method consisting of low-temperature deposition at 200°C followed by annealing at 600°C. The crystal structure, the crystallographic orientation, and the surface morphology are compared. L10 ordered FePd, FePt, and CoPt films epitaxially grow on the substrates with three variants, (110), (101), and (011), when deposited at 600°C. The c-axis of L10(110) variant is lying in the film plane, whereas those of L10(101) and L10(011) variants are 45° canted from the substrate surface. Disordered FePd, FePt, and CoPt single-crystal films of (110) orientation are formed by deposition at 200°C. An A1-L10 phase transformation occurs along A1[001], A1[010], and A1[001] by annealing the disordered films at 600°C. The annealed films thus consist of three L10 variants. Similar final crystal structure and orientation are realized in the FePd, the FePt, and the CoPt films prepared by employing the two different methods. The L10 ordered films prepared by one-step method have island-like surfaces involving facets, whereas those prepared by two-step method have very flat surfaces with the arithmetical mean roughness lower than 0.3 nm. The two-step method is useful for preparation of L10 ordered films with flat surfaces. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 3295 |
| Ending Page | 3298 |
| Page Count | 4 |
| File Size | 2066156 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 49 |
| Issue Number | 7 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-07-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Surface morphology Substrates Annealing Crystals Epitaxial growth Rough surfaces Surface roughness transformation epitaxial thin film flat surface $L1_{0}$ ordered phase |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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