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Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide.
Content Provider | Europe PMC |
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Author | Escobar Steinvall, Simon Stutz, Elias Z. Paul, Rajrupa Zamani, Mahdi Leran, Jean-Baptiste Dimitrievska, Mirjana Fontcuberta i Morral, Anna |
Copyright Year | 2021 |
Abstract | Growth approachesthat limit the interface area between layersto nanoscale regions are emerging as a promising pathway to limitthe interface defect formation due to mismatching lattice parametersor thermal expansion coefficient. Interfacial defect mitigation isof great interest in photovoltaics as it opens up more material combinationsfor use in devices. Herein, an overview of the vapor–liquid–solidand selective area epitaxy growth approaches applied to zinc phosphide(Zn3P2), an earth-abundant absorber material,is presented. First, we show how different morphologies, includingnanowires, nanopyramids, and thin films, can be achieved by tuningthe growth conditions and growth mechanisms. The growth conditionsare also shown to greatly impact the defect structure and compositionof the grown material, which can vary considerably from the idealstoichiometry (Zn3P2). Finally, the functionalproperties are characterized. The direct band gap could accuratelybe determined at 1.50 ± 0.1 eV, and through complementary densityfunctional theory calculations, we can identify a range of higher-orderband gap transitions observed through valence electron energy lossspectroscopy and cathodoluminescence. Furthermore, we outline theformation of rotated domains inside of the material, which are a potentialorigin of defect transitions that have been long observed in zincphosphide but not yet explained. The basic understanding providedreinvigorates the potential use of earth-abundant II–V semiconductorsin photovoltaic technology. Moreover, the transferrable nanoscalegrowth approaches have the potential to be applied to other materialsystems, as they mitigate the constraints of substrate–materialcombinations causing interface defects. |
Related Links | https://europepmc.org/backend/ptpmcrender.fcgi?accid=PMC9131307&blobtype=pdf |
Journal | ACS Applied Energy Materials [ACS Appl Energy Mater] |
Volume Number | 5 |
DOI | 10.1021/acsaem.1c02484 |
PubMed Central reference number | PMC9131307 |
Issue Number | 5 |
PubMed reference number | 35647493 |
e-ISSN | 25740962 |
Language | English |
Publisher | American Chemical Society |
Publisher Date | 2021-10-04 |
Access Restriction | Open |
Rights License | Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). © 2021 The Authors. Published by American Chemical Society |
Subject Keyword | zinc phosphide earth-abundant absorber nanoscale growth vapor−liquid−solid selective area epitaxy |
Content Type | Text |
Resource Type | Article |
Subject | Energy Engineering and Power Technology Chemical Engineering Materials Chemistry Electrical and Electronic Engineering Electrochemistry |