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Content Provider | IEEE Xplore Digital Library |
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Author | Yun Seok Chun Kwang Pyo Lee Sang Su Lee Sang Chul Kim Byungseop Hong Hong Seon Yang |
Copyright Year | 1999 |
Description | Author affiliation: Memory R&D Div., Hyundai Electron. Co. Ltd., Ichon, South Korea (Yun Seok Chun) |
Abstract | Boron behavior in p/sup +/ W-polycide gate used for high performance surface-channel pMOSFET was investigated. The poly structure and poly-WSi/sub x/ interface play an important role in the characteristics of the MOSFET. It was found that large-grain poly showed severe boron penetration compared to an 800 /spl Aring/ amorphous Si layer. In addition, boron out-diffusion into the WSi/sub x/ layer causes severe gate depletion which gives rise to low saturation current. Application of chemical oxide between poly and tungsten silicide turns out to be good barrier to block fluorine diffusion into the gate oxide as well as boron out-diffusion into the WSi/sub x/ layer. A surface channel pMOSFET using N/sub 2/O-annealed oxide and chemical oxide shows excellent characteristics of high saturation current, low leakage and gate depletion. |
Starting Page | 237 |
Ending Page | 240 |
File Size | 286010 |
Page Count | 4 |
File Format | |
ISBN | 0780357272 |
DOI | 10.1109/ICVC.1999.820891 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1999-10-26 |
Publisher Place | South Korea |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Electrodes Boron Annealing Silicides Tungsten Implants MOSFET circuits CMOS technology Threshold voltage Chemicals |
Content Type | Text |
Resource Type | Article |
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