NDLI: A comparison of inverter-type circuit lifetime and quasi-static analysis of NMOSFET lifetime

Content Provider	IEEE Xplore Digital Library
Author	Rakkhit, R. Yue, J.T.
Copyright Year	1991
Description	Author affiliation: Advanced Micro Devices, Sunnyvale, CA, USA (Rakkhit, R.; Yue, J.T.)
Abstract	Performance degradation of inverter-type circuit due to hot carrier injection is investigated. Frequency degradation of the ring oscillators was used as a monitor of the circuit performance for very short gate delay transients. A quasi-static approach was used to correlate the circuit performance with various parameter degradations of discrete NMOSFETs. It is shown that the degradation behavior of the circuit with time is quite different from that of a discrete device. The quasi-static calculations underestimate the degradation in CMOS inverter propagation delay and overestimate the predicted lifetime. The results indicate that created electron traps may be the cause for enhanced degradation.
Starting Page	112
Ending Page	117
File Size	383926
Page Count	6
File Format	PDF
ISBN	0879426802
DOI	10.1109/RELPHY.1991.145996
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-04-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Circuit optimization Hot carrier injection Frequency Ring oscillators Monitoring MOSFETs Inverters Propagation delay Electron traps
Content Type	Text
Resource Type	Article

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A comparison of inverter-type circuit lifetime and quasi-static analysis of NMOSFET lifetime