NDLI: A polymer condenser microphone on silicon with on-chip CMOS amplifier

Content Provider	IEEE Xplore Digital Library
Author	Pedersen, M. Olthuis, W. Bergveld, P.
Copyright Year	1997
Description	Author affiliation: MESA Res. Inst., Twente Univ., Enschede, Netherlands (Pedersen, M.)
Abstract	In this paper the development of a capacitive microphone with integrated preamplifier is described. The condenser microphone is made by micromachining of polyimide on silicon, and is compatible with CMOS technology. Therefore, the structure can be realised by post processing on substrates containing integrated circuits, independently of the IC process. Microphones with a required DC bias voltage of 4 V have been realised on a CMOS substrate containing PMOS buffer preamplifiers. From the measurements on these structures, it is illustrated how an immediate improvement of 4.8 dB of the microphone sensitivity and noise level can be obtained by using the integrated preamplifier. The measured sensitivity of the integrated condenser microphone was 2.5 mV/Pa and the equivalent noise level (ENL) was 29.5 dB(A) SPL.
Starting Page	445
Ending Page	446
File Size	263110
Page Count	2
File Format	PDF
ISBN	0780338294
DOI	10.1109/SENSOR.1997.613681
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-06-19
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Polymers Microphones Silicon Preamplifiers CMOS technology Noise measurement Noise level Micromachining Polyimides Integrated circuit technology
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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