NDLI: Molecular dynamics calculation studies of interstitial-Si diffusion and arsenic ion implantation damage

Content Provider	IEEE Xplore Digital Library
Author	Hane, M. Ikezawa, T. Furukawa, A.
Copyright Year	1999
Description	Author affiliation: Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan (Hane, M.)
Abstract	Silicon self-interstitial atom diffusion and implantation induced damage were studied by using molecular dynamics methods. The diffusion coefficient of interstitial silicon was calculated using a molecular dynamics method based on the Stillinger-Weber potential. A comparison was made between the calculation method based on the Einstein relationship and the method based on a hopping analysis. For interstitial silicon diffusion, atomic site exchanges to the lattice atoms occur, and thus the total displacement-based calculation underestimates the ideal value of the diffusivity of the interstitial silicon. Through a study of molecular dynamics calculation for the arsenic ion implantation process, it was found that the damage self-recovering process depends on the extent of damage. That is, damage caused by a single large impact easily recovers itself. In contrast, the damage leaves significant defects when two large impacts in succession cause an overlapped damage region.
Starting Page	47
Ending Page	50
File Size	451012
Page Count	4
File Format	PDF
ISBN	4930813980
DOI	10.1109/SISPAD.1999.799256
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-09-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. Of Appl. Physics
Subject Keyword	Ion implantation Silicon Lattices National electric code Computational modeling Workstations Linear discriminant analysis Laboratories Ultra large scale integration Equations
Content Type	Text
Resource Type	Article

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