NDLI: GaSb-based laser diodes operating within the spectra range of 2

Content Provider	IEEE Xplore Digital Library
Author	Belenky, G. Shterengas, L. Kipshidze, G.
Copyright Year	2010
Description	Author affiliation: State University of New York at Stony Brook, 11794 USA (Belenky, G.; Shterengas, L.; Kipshidze, G.)
Abstract	Room temperature CW semiconductor lasers emitting above 2 µm and operating within spectra region 2 to 3.5 µm are in demand for laser spectroscopy, madical applications and solid state laser pumping. Since 1999 [1] this demand has been met by developing GaSb based type-I diode laser technology. InGaSb quantum well lasers on GaSb substrate show excellent performance at the short wavelength end of the region. High power 2 µm diode lasers with broadened waveguide achieved threshold current densities below 100 $A/cm^{2}$ and differential quantum efficiencies of 53% for 2-mm-long multimode devices. Power conversion efficiency exceeds 25 %. Fast axis divergence of 42 degrees with 1.5 W output power can be achieved by adjusting the waveguide and cladding parameters of these devices (Figure1). Lasers fabricated based on AlGaAsSb/InGaAsSb/AlGaAsSb heterostructures provide above 1 W power from a single element within the spectra region 2.1 – 2.5 µm (Figure 2). Corresponding linear lasers arrays demonstrate above 10W CW power at room temperature.
Starting Page	45
Ending Page	46
File Size	145187
Page Count	2
File Format	PDF
ISBN	9781424456833
ISSN	08999406
e-ISBN	9781424456840
DOI	10.1109/ISLC.2010.5642759
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-09-26
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Waveguide lasers Diode lasers Gas lasers Semiconductor lasers Photonics Pump lasers Laser beams
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Libarray of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

GaSb-based laser diodes operating within spectral range of 2 – 3.5 µm

Diode lasers operating in spectral range from 1.9 to 3.5 μm

Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-$mu$m Wavelength Range

Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 – 3.5 μm

2.7-$mu$ m GaSb-Based Diode Lasers With Quinary Waveguide

Sub-kHz linewidth GaSb semiconductor diode lasers operating near 2 μm

Recollections on the founding of Spectra Diode Labs, Inc. (SDL, Inc.)

Low-threshold dye laser pumped by visible laser diodes

GaSb-based tapered diode lasers at 1.93 /spl mu/m with 1.5-W nearly diffraction-limited power

GaSb-based laser diodes operating within the spectra range of 2–3.5 µm

Similar Documents

GaSb-based laser diodes operating within spectral range of 2 – 3.5 µm

Diode lasers operating in spectral range from 1.9 to 3.5 μm

Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-$mu$m Wavelength Range

Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 – 3.5 μm

2.7-$mu$ m GaSb-Based Diode Lasers With Quinary Waveguide

Sub-kHz linewidth GaSb semiconductor diode lasers operating near 2 μm

Recollections on the founding of Spectra Diode Labs, Inc. (SDL, Inc.)

Low-threshold dye laser pumped by visible laser diodes

GaSb-based tapered diode lasers at 1.93 /spl mu/m with 1.5-W nearly diffraction-limited power

GaSb-based laser diodes operating within the spectra range of 2–3.5 µm