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Content Provider | IEEE Xplore Digital Library |
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Author | Ooi, Kelvin J. A. Ang, L. K. |
Copyright Year | 2014 |
Description | Author affiliation: Engineering Product Development, Singapore University of Technology and Design, 20 Dover Drive, Singapore 138682 (Ooi, Kelvin J. A.; Ang, L. K.) |
Abstract | In this paper, we study the excitation of non-relativistic electron beam with some velocity passing on top of a doped graphene layer (see Figure 1 below). We calculate the excitation energy for the plasmon on the graphene, and it is found that the required energy is 3 orders of magnitude smaller as compare to normal metallic plasmon. The main reason of such reduction will be explained. In bulk metals, for a reasonable wave number (e.g. $40µm^{−1}),$ this usually translates to high, relativistic electron-energies in the order of keVs (e.g. silver: 63.2keV; aluminium: 427keV). In graphene, however, due to the fact that (i) graphene is a thin film of vanishing thickness, and (ii) graphene has a non-classical scaling of the plasma frequency with respect to electron density, the electron-energies required to excite plasmon of the same β are non-relativistic and remarkably lower in the order of eVs (e.g. graphene (doped to 0.2eV). Its application as a coherent radiation source will also be discussed. |
Starting Page | 1 |
Ending Page | 1 |
File Size | 74739 |
Page Count | 1 |
File Format | |
ISBN | 9781479927111 |
e-ISBN | 9781479927135 |
DOI | 10.1109/PLASMA.2014.7012353 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2014-05-25 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Graphene Plasmons Electron beams Kelvin Product development Educational institutions Metals |
Content Type | Text |
Resource Type | Article |
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