NDLI: DEPFET detector-amplifier structure: Properties, achievements and new developments, concepts and applications

Content Provider	IEEE Xplore Digital Library
Author	Lutz, G. Herrmann, S. Lechner, P. Porro, M. Richter, R.H. Struder, L. Treis, J. Wolfel, S.
Copyright Year	2007
Description	Author affiliation: PNSensor GmbH, Munich (Lutz, G.)
Abstract	The DEPFET detector-amplifier structure invented 1985 by J. Kemmer and G. Lutz possesses several unique properties which make it extremely interesting as readout element in semiconductor detectors and in particular as building block of semiconductor pixel detectors. DEPFET detectors of various kinds have been built at the MPI Semiconductor Laboratory in Munich with its high quality double sided silicon processing line. These devices include DEPFET pixel detectors to be used in two X-ray astronomy missions and a RNDR (repeated non destructive readout) structure which allowed to measure the signal charge with a precision of a quarter of the elementary charge. A common property of these detectors is the simultaneous measurement of position and energy of X-ray photons (spectroscopic imaging). Presented for the first time are pixel devices which allow selection of signal charges arriving in a predefined time interval. Charges produced outside this gate interval are lead to a sink electrode. Furthermore the selected charge can be stored for delayed readout. These devices are for example well suited for application in the field of adaptive optics. Another new concept is that of a DEPFET with stongly nonlinear device characteristics that allows to combine high resolution charge measurement with large dynamic range. It will be used for application at the new X-ray sources, the free electron laser XFEL.
Starting Page	988
Ending Page	994
File Size	1754508
Page Count	7
File Format	PDF
ISBN	9781424409228
ISSN	10957863
DOI	10.1109/NSSMIC.2007.4437181
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-10-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	X-ray detection X-ray detectors X-ray imaging Charge measurement Extraterrestrial measurements X-ray lasers Laboratories Silicon Astronomy Current measurement
Content Type	Text
Resource Type	Article

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