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Content Provider | IEEE Xplore Digital Library |
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Author | Shindo, T. Okumura, T. Futami, M. Osabe, R. Ito, H. Koguchi, T. Amemiya, T. Nishiyama, N. Arai, S. |
Copyright Year | 2011 |
Description | Author affiliation: Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, 152-8552, Japan (Shindo, T.; Futami, M.; Osabe, R.; Ito, H.; Koguchi, T.; Amemiya, T.; Nishiyama, N.; Arai, S.) || Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, 152-8552, Japan (Okumura, T.) |
Abstract | One of the promising candidates to solve a problem of a performance limitation of LSI is replacing the electrical global wiring by an on chip optical interconnection. A semiconductor membrane laser, which consists of a high-index contrast waveguide, is expected to operate with ultra low threshold current due to an enhanced modal gain. We have introduced a lateral current injection (LCI) structure for electrically pumped membrane laser, and demonstrate LCI type Distributed feedback (DFB) laser with wirelike active region prepared on a semi-insulating (SI) InP substrate. A threshold current of as low as 11 mA and a stable single-mode operation were obtained for a device with the stripe width of 1.5 µm and the cavity length of 300 µm under a room-temperature continuous-wave (RT-CW) condition. |
Starting Page | 1 |
Ending Page | 4 |
File Size | 490277 |
Page Count | 4 |
File Format | |
ISBN | 9781457717536 |
e-ISBN | 9783800733569 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2011-05-22 |
Publisher Place | Germany |
Access Restriction | Subscribed |
Rights Holder | VDE |
Subject Keyword | Semiconductor lasers Threshold current Indium phosphide Pump lasers Distributed feedback devices Laser theory Gratings |
Content Type | Text |
Resource Type | Article |
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