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Content Provider | IEEE Xplore Digital Library |
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Author | Shanfield, S. Schindler, M. Aucoin, L. Platzker, A. Hoke, W. Lyman, P. Chu, S.L.G. Binder, R. |
Copyright Year | 1992 |
Description | Author affiliation: Raytheon, Lexington, MA, USA (Shanfield, S.; Schindler, M.; Aucoin, L.; Platzker, A.; Hoke, W.; Lyman, P.; Chu, S.L.G.; Binder, R.) |
Abstract | The authors report the third-order intermodulation distortion and phase deviation of 1.2-mm periphery double pulsed doped pseudomorphic high-electron-mobility transistors (HEMTs) at high levels of power and efficiency. A device tuned for single-tone power-added efficiency (PAE) of 59% with 0.87-W output power and 10.4 associated gain at 10 GHz could provide two-tone PAE of 50% with -19 dBc IM3/C and 0.30 W/tone. Single-tone phase deviation never exceeded 18 degrees from small signal with a phase deviation slope less than 3 degrees /dB. These measurements compare favorably to those of reported GaAs-based devices with comparable output power. A dry etched double recess structure was incorporated in the device for obtaining high reverse breakdown voltage and therefore high efficiency.<> |
Starting Page | 207 |
Ending Page | 210 |
File Size | 292735 |
Page Count | 4 |
File Format | |
ISBN | 0780307739 |
DOI | 10.1109/GAAS.1992.247189 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1997-10-04 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Intermodulation distortion Power measurement PHEMTs Gallium arsenide Linearity Doping Etching Microwave transistors Distortion measurement Power generation |
Content Type | Text |
Resource Type | Article |
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