NDLI: On the role of the interface with the substrate in the destructive dielectric breakdown of very thin insulating films grown on silicon

Content Provider	IEEE Xplore Digital Library
Author	Novkovski, N.
Copyright Year	1998
Description	Author affiliation: Phys. Dept., Fac. of Sci., Skopje, Macedonia (Novkovski, N.)
Abstract	In this paper we treat the connection between the insulator-silicon interface properties and the breakdown. Previously, we showed that there exists striking correlation between the generation of interface traps during the high-field stress and the charge to breakdown in a variety of oxynitride films prepared by RTP. Here we elaborate this question in more detail. This correlation being much stronger that the correlation of the breakdown with the field variations induced with charge trapping, indicates that the degradation leading to the breakdown is most probably insulator-silicon interface degradation itself rather then a direct field induced mechanism or hole trapping at the cathode of injection.
Starting Page	520
Ending Page	523
File Size	440211
Page Count	4
File Format	PDF
ISBN	0780342372
DOI	10.1109/ICSD.1998.709338
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric substrates Dielectric breakdown Electric breakdown Silicon Dielectric measurements Dielectrics and electrical insulation Degradation Fabrication Capacitors Dielectric thin films
Content Type	Text
Resource Type	Article

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On the role of the interface with the substrate in the destructive dielectric breakdown of very thin insulating films grown on silicon