NDLI: Investigation on Variability in Metal-Gate Si Nanowire MOSFETs: Analysis of Variation Sources and Experimental Characterization

Content Provider	IEEE Xplore Digital Library
Author	Runsheng Wang Jing Zhuge Ru Huang Tao Yu Jibin Zou Dong-Won Kim Donggun Park Yangyuan Wang
Copyright Year	1963
Abstract	The characteristic variability in gate-all-around (GAA) Si nanowire (NW) metal-oxide-semiconductor field-effect transistors (SNWTs) is analyzed and experimentally investigated in this paper. First, the main variation sources in SNWTs are overviewed, with the detailed discussion on the specific sources of NW cross-sectional shape variation, random dopant fluctuation in NW source/drain extension regions and NW line-edge roughness (LER). Then, following the measurement-modeling approach, via calibrated statistical simulation that is based on the modified analytical model for GAA SNWTs with corrections of quantum effects and quasi-ballistic transport, the variability sources in SNWTs are experimentally extracted from the measured devices with 10-nm-diameter NW channels and TiN metal gate. The results indicate that NW radius variation and metal-gate work function variation dominate both the threshold voltage and on-current variations due to the ultrascaled dimensions and strong quantum effects of GAA NW structure. The NW LER also contributes, but relatively less, to the threshold voltage variation.
Sponsorship	IEEE Electron Devices Society
Starting Page	2317
Ending Page	2325
Page Count	9
File Size	1451531
File Format	PDF
ISSN	00189383
Volume Number	58
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Silicon Shape Resource description framework Analytical models MOSFETs Quantum capacitance variability Line-edge roughness (LER) metal-gate work function variation (WFV) modeling random dopant fluctuation (RDF) Si nanowire metal–oxide–semiconductor field-effect transistor (MOSFET) (SNWT)
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials

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