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Content Provider | IEEE Xplore Digital Library |
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Author | Ru-Chin Tu Chun-Ju Tun Shyi-Ming Pan Chang-Cheng Chuo Sheu, J.K. Ching-En Tsai Te-Chung Wang Gou-Chung Chi |
Copyright Year | 1989 |
Abstract | The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organic vapor phase epitaxy system. LEDs with AlGaN EB layers grown at low temperature (LT) were found more effectively to prevent electron overflow than conventional LEDs with an AlGaN one grown at high temperature (HT). The electroluminescent intensity of LEDs with an LT-grown AlGaN layer was nearly three times greater than that of LEDs with an HT-grown AlGaN. Additionally, the LEDs with an LT-grown AlGaN layer in H/sub 2/ ambient were found to increase the leakage current by three orders of magnitude and reduce the efficiency of emission. |
Sponsorship | IEEE Lasers and Electro-Optics Society |
Starting Page | 1342 |
Ending Page | 1344 |
Page Count | 3 |
File Size | 292632 |
File Format | |
ISSN | 10411135 |
Volume Number | 15 |
Issue Number | 10 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2003-10-01 |
Publisher Place | U.S.A. |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Light emitting diodes Aluminum gallium nitride Temperature Gallium nitride Quantum well devices Substrates Epitaxial growth Electrons Leakage current Protection |
Content Type | Text |
Resource Type | Article |
Subject | Electrical and Electronic Engineering Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials |
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