NDLI: Ultrathin gate oxide CMOS on [111] surface-oriented Si substrate

Content Provider	IEEE Xplore Digital Library
Author	Momose, H.S. Ohguro, T. Nakamura, S.-I. Toyoshima, Y. Ishiuchi, H. Iwai, H.
Copyright Year	1963
Abstract	The properties of ultrathin gate oxides in the direct-tunneling regime and the characteristics of the related CMOS transistors on a [111] surface-oriented Si substrate were investigated and compared with those on a [100] substrate for the first time. It was confirmed that low field mobility of n-MOSFETs on the [111] substrate is smaller than that on the [100] substrate and that of p-MOSFETs on [111] is larger than that on [100] until the direct-tunneling gate oxide regime. It has been found that most of the electrical properties of MOSFETs, with the notable exception of mobility, become almost identical for [100] and [111] substrates when the oxide thickness is reduced to less than 2.0 nm. Some of the properties are quite different between the two substrates for the thicker oxide case. It has been found that the reliability of hot carrier injection and time-dependent dielectric breakdown (TDDB) of the oxides and MOSFETs on the [111] substrate is slightly better than that on the [100] substrate. In addition, the characteristics and reliability of oxides and MOSFETs on a wafer tilted 4/spl deg/ from [100] axis were investigated. It was found that there are few differences in the mobility between [100] and [100] 4/spl deg/ off substrates for both n- and p-MOSFET cases. The reliability of oxides or MOSFETs on the wafer was identical to that on normal [100] substrate. These results suggest that ultrathin gate oxide MOSFETs on Si surfaces with various orientations are likely to have practical applications. This is good news for possible future new structures of MOSFETs such as vertical or three-dimensional (3-D) MOSFETs.
Sponsorship	IEEE Electron Devices Society
Starting Page	1597
Ending Page	1605
Page Count	9
File Size	362529
File Format	PDF
ISSN	00189383
Volume Number	49
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-09-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dielectric films Silicon Semiconductor device reliability Integrated circuit reliability Tunneling Leakage currents Semiconductor-insulator interfaces Charge carrier mobility Hot carriers CMOS integrated circuits MOSFETs
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials

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